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MJD47T4G Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

BJTs

Case Package:

TO-252-3

Description:

DPAK NPN 250V 1A

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

MJD47T4G Datasheet (6 Pages)

Package Outline Dimension on6 Page

Package Footprint Pad Layout on6 Page

Part Numbering System on1 Page 5 Page 6 Page

MJD47T4G Application Note (7 Pages)

MJD47T4G Datasheet PDF (6 Pages)

View Datasheet

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MJD47T4G Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Frequency

10 MHz

Number of Pins

4 Pin

Voltage Rating (DC)

250 V

Current Rating

1.00 A

Case/Package

TO-252-3

Number of Positions

4 Position

Polarity

NPN

Power Dissipation

1.56 W

Breakdown Voltage (Collector to Emitter)

250 V

Continuous Collector Current

hFE Min

30 @300mA, 10V

Input Power (Max)

1.56 W

DC Current Gain (hFE)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

1560 mW

View Datasheet >

MJD47T4G Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Material

Silicon

Size-Length

6.73 mm

Size-Width

6.22 mm

Size-Height

2.38 mm

Operating Temperature

-65℃ ~ 150℃ (TJ)

View Datasheet >

MJD47T4G Environmental

MJD47T4G Export Classifications

MJD47T4G Function Overview

MJD47T4G Documents

MJD47T4G Datasheet

ON Semiconductor

6 Pages / 0.07 MByte

MJD47T4G Other Datasheet PDF

ON Semiconductor

7 Pages / 0.07 MByte

MJD47T4G Application Note

ON Semiconductor

7 Pages / 0.11 MByte

MJD47T4G Notice File

ON Semiconductor

5 Pages / 0.04 MByte

MJD47T4G Other References

ON Semiconductor

1 Pages / 0.13 MByte

MJD47T4 Documents

MJD47T4 Datasheet PDF

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Trans GP BJT NPN 250V 1A 15000mW 3Pin(2+Tab) DPAK T/R

MJD47T4 Datasheet PDF

ON Semiconductor

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MJD47T4 Datasheet PDF

Motorola

NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15W

MJD47T4G Datasheet PDF

ON Semiconductor

DPAK NPN 250V 1A

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