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MJE181STU
$ 0.188
MJE181STU Datasheet PDF (4 Pages)
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MJE181STU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
50 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
60.0 V
Current Rating
3.00 A
Case/Package
TO-126-3
Polarity
NPN
Power Dissipation
1.5 W
Breakdown Voltage (Collector to Emitter)
60 V
Continuous Collector Current
3A
hFE Min
50 @100mA, 1V
Input Power (Max)
1.5 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
12.5 W

MJE181STU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
8 mm
Size-Width
3.25 mm
Size-Height
11 mm
Operating Temperature
150℃ (TJ)

MJE181STU Documents

Fairchild
4 Pages / 0.04 MByte
Fairchild
6 Pages / 0.14 MByte
Fairchild
6 Pages / 0.11 MByte

MJE181 Documents

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Trans GP BJT NPN 60V 3A 3Pin TO-126
Taitron
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ST Microelectronics
3A, 60V, NPN, Si, POWER TRANSISTOR, TO-126
Mospec
POWER TRANSISTORS(3A,40-80V,12.5W)
Samsung
60V, 3A, NPN epitaxial silicon transistor
Central Semiconductor
Leaded Power Transistor General PurposeO
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