MJE210T Datasheet PDF - ON Semiconductor

●Complementary Silicon Power Plastic Transistors

●These devices are designed for low voltage, low-power, high-gain audio amplifier applications.

●Features

●• Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

●• High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc

●   = 45 (Min) @ IC = 2.0 Adc

●   = 10 (Min) @ IC = 5.0 Adc

●• Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc

●• High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc

●• Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB

●• Pb-Free Packages are Available