MJE253 Datasheet PDF - ON Semiconductor

●The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.

●Features

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● High Collector-Emitter Sustaining Voltage -

●VCEO(sus) = 100 Vdc (Min) MJE243, MJE253

● High DC Current Gain @ IC = 200 mAdc

●hFE = 40-200

●hFE = 40-120 - MJE243, MJE253

● Low Collector-Emitter Saturation Voltage -

●VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc

● High Current Gain Bandwidth Product -

●fT = 40 MHz (Min) @ IC = 100 mAdc

● Annular Construction for Low Leakages

●ICBO = 100 nAdc (Max) @ Rated VCB

● Pb-Free Packages are Available