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Part Datasheet Search > BJTs > ON Semiconductor > MJE350G Datasheet PDF
MJE350G
$ 0.29

MJE350G Datasheet PDF - ON Semiconductor

Manufacturer:
ON Semiconductor
Category:
BJTs
Case Package:
TO-126-3
Description:
TO-225 PNP 300V 0.5A
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
MJE350G Datasheet (2 Pages)
Package Outline Dimension on2 Page
Part Numbering System on1 Page
MJE350G Application Note (3 Pages)
MJE350G Datasheet PDF (2 Pages)
View Datasheet
Click page to view the detail

MJE350G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
-300 V
Current Rating
-500 mA
Case/Package
TO-126-3
Number of Positions
3 Position
Polarity
PNP, P-Channel
Power Dissipation
20 W
Breakdown Voltage (Collector to Emitter)
300 V
Thermal Resistance
6.25℃/W (RθJC)
Continuous Collector Current
0.5A
hFE Min
30
Input Power (Max)
20 W
DC Current Gain (hFE)
240
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
20000 mW
View Datasheet >

MJE350G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Material
Silicon
Size-Length
7.74 mm
Size-Width
2.66 mm
Size-Height
11.04 mm
Operating Temperature
-65℃ ~ 150℃
View Datasheet >

MJE350G Documents

MJE350G Datasheet
ON Semiconductor
2 Pages / 0.11 MByte
MJE350G Other Datasheet PDF
ON Semiconductor
8 Pages / 0.23 MByte
MJE350G Drawing Diagrams
ON Semiconductor
2 Pages / 0.03 MByte
MJE350G Application Note
ON Semiconductor
3 Pages / 0.09 MByte
MJE350G Notice File
ON Semiconductor
11 Pages / 1.83 MByte
MJE350G Other References
ON Semiconductor
1 Pages / 0.14 MByte

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Multicomp
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Samsung
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