MMBT2222ALT1HTSA1 Datasheet PDF - Infineon

●Design various electronic circuits with this versatile NPN MMBT2222ALT1HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.