MMBT2907ALT1HTSA1 Datasheet PDF - Infineon

●Do you require a transistor in your circuit operating in the high-voltage range? This PNP MMBT2907ALT1HTSA1 general purpose bipolar junction transistor, developed by Infineon Technologies, is your solution. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.