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Part Datasheet Search > BJTs > ON Semiconductor > MMBT2907AWT1G Datasheet PDF
MMBT2907AWT1G
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MMBT2907AWT1G Datasheet PDF (6 Pages)
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MMBT2907AWT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
200 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-60.0 V
Current Rating
-600 mA
Case/Package
SC-70-3
Power Rating
0.15 W
Number of Positions
3 Position
Polarity
PNP
Power Dissipation
150 mW
Gain Bandwidth Product
200 MHz
Breakdown Voltage (Collector to Emitter)
60 V
Continuous Collector Current
0.6A
hFE Min
100 @150mA, 10V
Input Power (Max)
150 mW
DC Current Gain (hFE)
200
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
150 mW

MMBT2907AWT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.2 mm
Size-Width
1.24 mm
Size-Height
0.7 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MMBT2907AWT1G Documents

ON Semiconductor
6 Pages / 0.12 MByte
ON Semiconductor
11 Pages / 0.1 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
6 Pages / 0.12 MByte
ON Semiconductor
4 Pages / 0.03 MByte
ON Semiconductor
1 Pages / 0.14 MByte

MMBT2907AWT1 Documents

ON Semiconductor
SC-70 PNP 60V 0.6A
Motorola
General Purpose Transistor
Leshan Radio
PNP Silicon General Purpose Transistor
Willas
PNP Silicon General Purpose Transistor
ON Semiconductor
SC-70 PNP 60V 0.6A
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