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Part Datasheet Search > BJTs > ON Semiconductor > MMBT3906LT1 Datasheet PDF
MMBT3906LT1
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MMBT3906LT1 Datasheet PDF (7 Pages)
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MMBT3906LT1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-40.0 V
Current Rating
-200 mA
Case/Package
SOT-23-3
Power Dissipation
300 mW
Breakdown Voltage (Collector to Emitter)
40 V
hFE Min
100 @10mA, 1V
Input Power (Max)
225 mW
DC Current Gain (hFE)
300
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

MMBT3906LT1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Material
Silicon

MMBT3906LT1 Documents

ON Semiconductor
7 Pages / 0.12 MByte
ON Semiconductor
6 Pages / 0.09 MByte

MMBT3906 Documents

Fairchild
Trans GP BJT PNP 40V 0.2A 300mW 3Pin SOT-23 T/R
CJ
SOT-23 PNP 40V 200mA
ON Semiconductor
Trans GP BJT PNP 40V 0.2A 3Pin SOT-23 T/R
Diotec Semiconductor
SMD General Purpose PNP Transistors
ST Microelectronics
Trans GP BJT PNP 40V 0.2A 3Pin SOT-23
Rectron
Trans GP BJT PNP 40V 3-Pin SOT-23
NTE Electronics
NTE ELECTRONICS MMBT3906 TRANSISTOR PNP SILICON 40V IC=250mA SOT-23 SURFACE MOUNT CASE GENERAL PURPOSE AMPLIFIER SWITCH
Taiwan Semiconductor
Discrete Devices-Transistor-PNP Bipolar Transistor
NXP
PNP switching transistor
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