MMBT3906TT1G Datasheet PDF - ON Semiconductor

●If your circuit"s specifications require a device that can handle high levels of voltage, ON Semiconductor"s PNP MMBT3906TT1G general purpose bipolar junction transistor is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.