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Part Datasheet Search > BJTs > ON Semiconductor > MMBT3906WT1G Datasheet PDF
MMBT3906WT1G
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MMBT3906WT1G Datasheet PDF (10 Pages)
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MMBT3906WT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
250 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-40.0 V
Current Rating
-200 mA
Case/Package
SC-70-3
Number of Positions
3 Position
Polarity
PNP, P-Channel
Power Dissipation
150 mW
Gain Bandwidth Product
250 MHz
Breakdown Voltage (Collector to Emitter)
40 V
Continuous Collector Current
0.2A
hFE Min
100 @10mA, 1V
Input Power (Max)
150 mW
DC Current Gain (hFE)
250
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
150 mW

MMBT3906WT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.2 mm
Size-Width
1.24 mm
Size-Height
1 mm
Operating Temperature
-55℃ ~ 150℃

MMBT3906WT1G Documents

ON Semiconductor
10 Pages / 0.07 MByte
ON Semiconductor
14 Pages / 0.19 MByte
ON Semiconductor
9 Pages / 1.55 MByte
ON Semiconductor
1 Pages / 0.14 MByte

MMBT3906WT1 Documents

ON Semiconductor
SC-70 PNP 40V 0.2A
Leshan Radio
General Purpose Transistors NPN and PNP Silicon
Secos
TRANS PNP 40V 0.2A SOT323
Motorola
General Purpose Transistor
Willas
General Purpose Transistors
ON Semiconductor
SC-70 PNP 40V 0.2A
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