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Part Datasheet Search > BJTs > ON Semiconductor > MMBT4403LT1G Datasheet PDF
MMBT4403LT1G
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MMBT4403LT1G Datasheet PDF (7 Pages)
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MMBT4403LT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
200 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-40.0 V
Current Rating
-600 mA
Case/Package
SOT-23-3
Power Rating
225 mW
Number of Positions
3 Position
Polarity
PNP
Power Dissipation
225 mW
Breakdown Voltage (Collector to Emitter)
40 V
Continuous Collector Current
0.6A
hFE Min
100 @150mA, 2V
Input Power (Max)
300 mW
DC Current Gain (hFE)
200
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

MMBT4403LT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃

MMBT4403LT1G Documents

ON Semiconductor
7 Pages / 0.14 MByte
ON Semiconductor
14 Pages / 0.05 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
1 Pages / 0.14 MByte

MMBT4403LT1 Documents

ON Semiconductor
SOT-23 PNP 40V 0.6A
Motorola
4403, Motorola Ic
Leshan Radio
General Purpose Transistor(PNP Silicon)
Micro Commercial Components
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
Rectron Semiconductor
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
SynSemi
Small Signal Bipolar Transistor, 0.6A I(C), PNP,
DB Lectro
Transistor
Jiangsu Changjiang Electronics Technology
Transistor
ON Semiconductor
SOT-23 PNP 40V 0.6A
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