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MMBT5087LT1G
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MMBT5087LT1G Datasheet PDF (7 Pages)
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MMBT5087LT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
40 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-50.0 V
Current Rating
-50.0 mA
Case/Package
SOT-23-3
Power Rating
300 mW
Number of Positions
3 Position
Polarity
PNP
Power Dissipation
225 mW
Breakdown Voltage (Collector to Emitter)
50 V
Continuous Collector Current
0.05A
hFE Min
250 @100µA, 5V
Input Power (Max)
300 mW
DC Current Gain (hFE)
40
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

MMBT5087LT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
3.04 mm
Size-Width
1.3 mm
Size-Height
1.01 mm
Operating Temperature
-55℃ ~ 150℃

MMBT5087LT1G Documents

ON Semiconductor
7 Pages / 0.09 MByte
ON Semiconductor
22 Pages / 1.31 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
7 Pages / 0.23 MByte
ON Semiconductor
1 Pages / 0.14 MByte

MMBT5087LT1 Documents

ON Semiconductor
SOT-23 PNP 50V 0.05A
Leshan Radio
Low Noise Transistor(PNP Silicon)
Motorola
Low Noise Transistor
DB Lectro
Transistor
ON Semiconductor
SOT-23 PNP 50V 0.05A
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