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MMBT5088LT1G
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MMBT5088LT1G Datasheet PDF (5 Pages)
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MMBT5088LT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
50 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
30.0 V
Current Rating
50.0 mA
Case/Package
SOT-23-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
225 mW
Breakdown Voltage (Collector to Emitter)
30 V
Continuous Collector Current
0.05A
hFE Min
300 @100µA, 5V
Input Power (Max)
300 mW
DC Current Gain (hFE)
50
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
225 mW

MMBT5088LT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
3.04 mm
Size-Width
1.4 mm
Size-Height
1.01 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MMBT5088LT1G Documents

ON Semiconductor
5 Pages / 0.07 MByte
ON Semiconductor
22 Pages / 1.31 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
5 Pages / 0.19 MByte
ON Semiconductor
1 Pages / 0.13 MByte

MMBT5088LT1 Documents

ON Semiconductor
SOT-23 NPN 30V 0.05A
Leshan Radio
Low Noise Transistors(NPN Silicon)
Motorola
Low Noise Transistors
DB Lectro
Transistor
ON Semiconductor
SOT-23 NPN 30V 0.05A
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