MMBT5401WT1G Datasheet PDF - ON Semiconductor

●Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP MMBT5401WT1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 400 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 5 V.