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Part Datasheet Search > BJTs > ON Semiconductor > MMBT5550LT1G Datasheet PDF
MMBT5550LT1G
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MMBT5550LT1G Datasheet PDF (6 Pages)
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MMBT5550LT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
140 V
Current Rating
600 mA
Case/Package
SOT-23-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
225 mW
Breakdown Voltage (Collector to Emitter)
140 V
Continuous Collector Current
0.6A
hFE Min
60 @10mA, 5V
Input Power (Max)
225 mW
DC Current Gain (hFE)
250
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

MMBT5550LT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
3.04 mm
Size-Width
1.4 mm
Size-Height
1.01 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MMBT5550LT1G Documents

ON Semiconductor
6 Pages / 0.1 MByte
ON Semiconductor
14 Pages / 0.05 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
1 Pages / 0.13 MByte

MMBT5550LT1 Documents

ON Semiconductor
SOT-23 NPN 140V 0.06A
Motorola
High Voltage Transistors
Leshan Radio
High Voltage Transistors(NPN Silicon)
Rectron Semiconductor
Small Signal Bipolar Transistor, 0.6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
SynSemi
Transistor,
Jiangsu Changjiang Electronics Technology
Transistor
DB Lectro
Transistor
ON Semiconductor
SOT-23 NPN 140V 0.6A
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