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Part Datasheet Search > BJTs > Diodes > MMBT5551-7-F Datasheet PDF
MMBT5551-7-F
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MMBT5551-7-F Datasheet PDF (6 Pages)
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MMBT5551-7-F Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
300 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
160 V
Current Rating
200 mA
Case/Package
SOT-23-3
Power Rating
0.3 W
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
300 mW
Breakdown Voltage (Collector to Emitter)
160 V
hFE Min
80 @10mA, 5V
hFE Max
250
Input Power (Max)
300 mW
DC Current Gain (hFE)
80
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

MMBT5551-7-F Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.05 mm
Size-Width
1.4 mm
Size-Height
1 mm
Operating Temperature
-55℃ ~ 150℃

MMBT5551-7-F Documents

Diodes
6 Pages / 0.2 MByte
Diodes
293 Pages / 0.91 MByte
Diodes
1 Pages / 0.14 MByte

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MULTICOMP MMBT5551-7F Bipolar (BJT) Single Transistor, NPN, 160V, 300MHz, 350mW, 600mA, 30 hFE
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DIODES INC. MMBT5551-7F Bipolar (BJT) Single Transistor, NPN, 160V, 300mW, 600mA, 80 hFE
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