MMBTA06LT1HTSA1 Datasheet PDF - Infineon

●Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN MMBTA06LT1HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.