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Part Datasheet Search > BJTs > ON Semiconductor > MMBTA13LT1G Datasheet PDF
MMBTA13LT1G
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MMBTA13LT1G Datasheet PDF (6 Pages)
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MMBTA13LT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
125 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
30.0 V
Current Rating
300 mA
Case/Package
SOT-23-3
Halogen Free Status
Halogen Free
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
225 mW
Breakdown Voltage (Collector to Emitter)
30 V
Continuous Collector Current
0.3A
hFE Min
10000 @100mA, 5V
Input Power (Max)
225 mW
DC Current Gain (hFE)
10000
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Gain Bandwidth
125MHz (Min)
Power Dissipation (Max)
300 mW

MMBTA13LT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.04 mm
Size-Width
1.3 mm
Size-Height
1.01 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MMBTA13LT1G Documents

ON Semiconductor
6 Pages / 0.11 MByte
ON Semiconductor
22 Pages / 1.31 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
6 Pages / 0.18 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
1 Pages / 0.13 MByte

MMBTA13LT1 Documents

ON Semiconductor
SOT-23 NPN 30V 0.3A
Motorola
TRANS NPN DARL 30V 0.3A SOT23
Leshan Radio
Darlington Amplifier Transistors(NPN Silicon)
Rectron Semiconductor
Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DB Lectro
Transistor
Freescale
Darlington Amplifier Transistors
ON Semiconductor
SOT-23 NPN 30V 0.3A
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