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Part Datasheet Search > BJTs > ON Semiconductor > MMBTA56WT1 Datasheet PDF
MMBTA56WT1
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MMBTA56WT1 Datasheet PDF (5 Pages)
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MMBTA56WT1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
-80.0 V
Current Rating
-500 mA
Case/Package
SC-70-3
Polarity
PNP
Power Dissipation
150 mW
Gain Bandwidth Product
50 MHz
Breakdown Voltage (Collector to Emitter)
80 V
Continuous Collector Current
0.5A
hFE Min
100 @100mA, 1V
Input Power (Max)
150 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃

MMBTA56WT1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Size-Length
2.1 mm
Size-Width
1.24 mm
Size-Height
0.85 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MMBTA56WT1 Documents

ON Semiconductor
5 Pages / 0.1 MByte
ON Semiconductor
31 Pages / 0.08 MByte

MMBTA56 Documents

Fairchild
Transistor: NPN; bipolar; -80V; -500mA; 350mW; SOT23
ON Semiconductor
Trans GP BJT PNP 80V 0.5A 3Pin SOT-23 T/R
CJ
SOT-23 PNP 80V 500mA
Diotec Semiconductor
General Purpose Si-Epitaxial Planar Transistors
Vishay Semiconductor
TRANSISTOR, PNP, 80V, 0.5A, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Power Dissipat...
Diodes
Trans GP BJT PNP 80V 0.5A 3Pin SOT-23
UTC
SOT-23 PNP 80V 0.5A
KEC(Korea Electronics)
General Purpose Transistor
Panjit
SOT-23 PNP -80V -0.5A
Micro Commercial Components
SOT-23 Plastic-Encapsulate Biploar Transistors
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