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Part Datasheet Search > BJTs > ON Semiconductor > MMBTA63LT1G Datasheet PDF
MMBTA63LT1G
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MMBTA63LT1G Datasheet PDF (2 Pages)
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MMBTA63LT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-30.0 V
Current Rating
-500 mA
Case/Package
SOT-23-3
Halogen Free Status
Halogen Free
Number of Positions
3 Position
Polarity
PNP
Power Dissipation
225 mW
Breakdown Voltage (Collector to Emitter)
30 V
Continuous Collector Current
0.5A
hFE Min
10000 @100mA, 5V
Input Power (Max)
225 mW
DC Current Gain (hFE)
5000
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Gain Bandwidth
125MHz (Min)
Power Dissipation (Max)
300 mW

MMBTA63LT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.04 mm
Size-Width
1.3 mm
Size-Height
1.01 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MMBTA63LT1G Documents

ON Semiconductor
2 Pages / 0.19 MByte
ON Semiconductor
22 Pages / 1.31 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
4 Pages / 0.1 MByte
ON Semiconductor
1 Pages / 0.14 MByte

MMBTA63LT1 Documents

ON Semiconductor
SOT-23 PNP 30V 0.5A
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Leshan Radio
Darlington Transistors(PNP Silicon)
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ON Semiconductor
SOT-23 PNP 30V 0.5A
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