MOCD213R2M Datasheet PDF - ON Semiconductor

●The MOCD213M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.

●Features

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● Closely Matched Current Transfer Ratios

● Minimum BVCEO of 70 V Guaranteed

● MOCD207M, MOCD208M

● Minimum BVCEO of 30 V Guaranteed

● MOCD211M, MOCD213M, MOCD217M

● Low LED Input Current Required for Easier Logic Interfacing

● MOCD217M

● Convenient Plastic SOIC-8 Surface Mountable Package Style, with 0.050" Lead Spacing

● Safety and Regulatory Approvals:

● UL1577, 2,500 VACRMS for 1 Minute

● DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage