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Part Datasheet Search > BJTs > ON Semiconductor > MPS650G Datasheet PDF
MPS650G
$ 1.151
MPS650G Datasheet PDF (5 Pages)
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MPS650G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
75 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
40.0 V
Current Rating
2.00 A
Case/Package
TO-92-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
625 mW
Breakdown Voltage (Collector to Emitter)
40 V
Continuous Collector Current
2A
hFE Min
75 @1A, 2V
Input Power (Max)
625 mW
DC Current Gain (hFE)
75
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
625 mW

MPS650G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Box
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MPS650G Documents

ON Semiconductor
5 Pages / 0.09 MByte
ON Semiconductor
9 Pages / 0.19 MByte
ON Semiconductor
22 Pages / 1.13 MByte
ON Semiconductor
9 Pages / 0.15 MByte
ON Semiconductor
1 Pages / 0.16 MByte

MPS650 Documents

ON Semiconductor
Trans GP BJT NPN 40V 2A 3Pin TO-92 Bulk
Central Semiconductor
Trans GP BJT NPN 40V 2A 3Pin TO-92 Box
Continental Device
0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 2A Ic, 75 - hFE
Motorola
Amplifier Transistors
National Semiconductor
TRANSISTOR,BJT,NPN,20V V(BR)CEO,100MA I(C),TO-92
Micro Electronics
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Silicon, NPN, TO-92, TO-92A, 3 PIN
New Jersey Semiconductor
Trans GP BJT NPN 40V 2A 3Pin TO-92 Boxo
Toshiba
TRANSISTOR POWER TRANSISTOR, 2-78A1A, 11 PIN, BIP General Purpose Power
ON Semiconductor
TO-92 NPN 40V 2A
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