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Part Datasheet Search > BJTs > ON Semiconductor > MPS751G Datasheet PDF
MPS751G
$ 0.114
MPS751G Datasheet PDF (5 Pages)
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MPS751G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
75 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-60.0 V
Current Rating
-2.00 A
Case/Package
TO-226-3
Number of Positions
3 Position
Polarity
PNP, P-Channel
Power Dissipation
625 mW
Gain Bandwidth Product
75 MHz
Breakdown Voltage (Collector to Emitter)
60 V
Thermal Resistance
83.3℃/W (RθJC)
Continuous Collector Current
2A
hFE Min
75 @1A, 2V
Input Power (Max)
625 mW
DC Current Gain (hFE)
75
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1.5 W

MPS751G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Box
Material
Silicon
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MPS751G Documents

ON Semiconductor
5 Pages / 0.09 MByte
ON Semiconductor
36 Pages / 1.23 MByte
ON Semiconductor
9 Pages / 0.15 MByte

MPS751 Documents

ON Semiconductor
Trans GP BJT PNP 60V 2A 625mW 3Pin TO-92 Bag
Fairchild
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1Element, PNP, Silicon, TO-92, TO-92, 3Pin
Central Semiconductor
Trans GP BJT PNP 60V 2A 3Pin TO-92 Box
CJ
TO-92 PNP 60V 2000mA
Continental Device
0.625W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 2A Ic, 75 - hFE
KEC(Korea Electronics)
General Purpose Transistor
Motorola
Amplifier Transistorss
Micro Commercial Components
PNP Encapsulate Transistors
New Jersey Semiconductor
Trans GP BJT PNP 60V 2A 3Pin TO-92 Bulk
ON Semiconductor
TO-92 PNP 60V 2A
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