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MPSA13RLRAG
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MPSA13RLRAG Datasheet PDF (6 Pages)
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MPSA13RLRAG Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
30.0 V
Current Rating
500 mA
Case/Package
TO-92-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
625 mW
Breakdown Voltage (Collector to Emitter)
30 V
Continuous Collector Current
0.5A
hFE Min
10000 @100mA, 5V
Input Power (Max)
625 mW
DC Current Gain (hFE)
5000
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Gain Bandwidth
125MHz (Min)
Power Dissipation (Max)
625 mW

MPSA13RLRAG Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

MPSA13RLRAG Documents

ON Semiconductor
6 Pages / 0.07 MByte
ON Semiconductor
9 Pages / 0.19 MByte
ON Semiconductor
9 Pages / 0.15 MByte
ON Semiconductor
1 Pages / 0.16 MByte

MPSA13 Documents

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NTE ELECTRONICS MPSA13 Bipolar (BJT) Single Transistor, NPN, 100V, 200MHz, 1.5W, 500mA, 10000 hFE
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Diodes
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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