MPSA18RLRAG Datasheet PDF - ON Semiconductor

●Use this versatile NPN MPSA18RLRAG GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 6.5 V. Its maximum power dissipation is 625 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6.5 V.