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Part Datasheet Search > BJTs > Micro Commercial Components > MPSA92-AP Datasheet PDF
MPSA92-AP
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MPSA92-AP Datasheet PDF (4 Pages)
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MPSA92-AP Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
50 MHz
Number of Pins
3 Pin
Case/Package
TO-226-3
Number of Positions
3 Position
Polarity
PNP
Power Dissipation
625 mW
Breakdown Voltage (Collector to Emitter)
300 V
Continuous Collector Current
0.3A
hFE Min
80 @10mA, 10V
Input Power (Max)
625 mW
DC Current Gain (hFE)
25
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
625 mW

MPSA92-AP Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Box (TB)
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

MPSA92-AP Documents

Micro Commercial Components
4 Pages / 0.24 MByte
Micro Commercial Components
13 Pages / 1.08 MByte

MPSA92 Documents

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Transistor: PNP; bipolar; 300V; 500mA; 625mW; TO92
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ON Semiconductor
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Multicomp
MULTICOMP MPSA92 Bipolar (BJT) Single Transistor, PNP, 300V, 50MHz, 625mW, 500mA, 40 hFE
Central Semiconductor
TRANS PNP 300V 0.5A TO-92
NXP
Trans GP BJT PNP 300V 0.1A 3Pin SPT
Taitron
300V PNP High Voltage Transistor in TO-92, RoHS
Siemens Semiconductor
PNP Silicon High-Voltage Transistors
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