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Part Datasheet Search > BJTs > ON Semiconductor > MPSH10G Datasheet PDF
MPSH10G
$ 0.053

MPSH10G Datasheet PDF - ON Semiconductor

Manufacturer:
ON Semiconductor
Category:
BJTs
Case Package:
TO-92-3
Description:
Trans RF BJT NPN 25V 350000mW 3Pin TO-92 Box
Pictures:
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Symbol
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Product Pictures
Documentation:
MPSH10G Datasheet (3 Pages)
Package Outline Dimension on3 Page
Part Numbering System on1 Page2 Page3 Page
MPSH10G Datasheet PDF (3 Pages)
View Datasheet
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MPSH10G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
650 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
25.0 V
Current Rating
4.00 mA
Case/Package
TO-92-3
Polarity
NPN
Power Dissipation
350 W
Gain Bandwidth Product
650 MHz
Breakdown Voltage (Collector to Emitter)
25 V
Thermal Resistance
125℃/W (RθJC)
hFE Min
60 @4mA, 10V
Input Power (Max)
350 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
350000 mW
View Datasheet >

MPSH10G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk
Material
Silicon
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃
View Datasheet >

MPSH10G Documents

MPSH10G Datasheet
ON Semiconductor
3 Pages / 0.08 MByte
MPSH10G Other Datasheet PDF
ON Semiconductor
14 Pages / 0.27 MByte

MPSH10 Documents

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MPSH10G Datasheet PDF
ON Semiconductor
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