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MPSW42G
$ 0.441
MPSW42G Datasheet PDF (4 Pages)
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MPSW42G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
50 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
300 V
Current Rating
500 mA
Case/Package
TO-226-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
1 W
Breakdown Voltage (Collector to Emitter)
300 V
Continuous Collector Current
0.5A
hFE Min
40 @30mA, 10V
Input Power (Max)
1 W
DC Current Gain (hFE)
50
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1000 mW

MPSW42G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Box
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

MPSW42G Documents

ON Semiconductor
4 Pages / 0.09 MByte
ON Semiconductor
9 Pages / 0.19 MByte
ON Semiconductor
9 Pages / 0.15 MByte

MPSW42 Documents

ON Semiconductor
TO-92 NPN 300V 0.5A
Motorola
One Watt High Voltage Transistor
National Semiconductor
TRANSISTOR 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226, BIP General Purpose Small Signal
TI
300V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226
ON Semiconductor
TO-92 NPN 300V 0.5A
ON Semiconductor
TO-92 NPN 300V 0.5A
ON Semiconductor
TO-92 NPN 300V 0.5A
Motorola
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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