MPSW45AZL1G Datasheet PDF - ON Semiconductor

●ON Semiconductor"s NPN MPSW45AZL1G Darlington transistor is the ideal component to use in situations where a higher current gain is needed. This product"s maximum continuous DC collector current is 1 A, while its minimum DC current gain is 25000@200mA@5 V|15000@500mA@5V|4000@1A@5V. It has a maximum collector emitter saturation voltage of 1.5@2mA@1A V. This Darlington transistor array"s maximum emitter base voltage is 12 V, while its maximum base emitter saturation voltage is 2@2mA@1A V. Its maximum power dissipation is 1000 mW. This Darlington transistor array has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 12 V.