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Part Datasheet Search > BJTs > Microsemi > MRF553G Datasheet PDF
MRF553G
$ 4.36
MRF553G Datasheet PDF (5 Pages)
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MRF553G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
Power Macro
Polarity
NPN
Power Dissipation
3000 mW
Output Power
1.5 W
Breakdown Voltage (Collector to Emitter)
16 V
Gain
11dB ~ 13dB
hFE Min
30 @250mA, 5V
Input Power (Max)
3 W
Power Dissipation (Max)
3000 mW

MRF553G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Bulk
Size-Height
2.54 mm

MRF553G Documents

Microsemi
5 Pages / 0.13 MByte
Microsemi
4 Pages / 0.08 MByte
Microsemi
1 Pages / 0.1 MByte

MRF553 Documents

Microsemi
Trans RF BJT NPN 16V 0.5A 4Pin Power Macro
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RF Small Signal Bipolar Transistor, 0.5A I(C), 1Element, Very High Frequency Band, Silicon, NPN
MOTO
TRANS NPN 16V 500mA POWERMACRO
Microsemi
Trans RF BJT NPN 16V 0.5A 4Pin Power Macro
Microsemi
Power Devices, Up to 1GHz, Class A, B, and C, Common Emitter
Microsemi
TRANS NPN 16V 500mA POWERMACRO
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