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Part Datasheet Search > Transistors > NXP > MRF6V2150NBR1 Datasheet PDF
MRF6V2150NBR1
$ 57.961
MRF6V2150NBR1 Datasheet PDF (10 Pages)
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MRF6V2150NBR1 Specifications

TYPE
DESCRIPTION
Mounting Style
Flange
Frequency
220 MHz
Number of Pins
5 Pin
Current Rating
2.5 mA
Case/Package
TO-272
Halogen Free Status
Halogen Free
Number of Positions
4 Position
Power Dissipation
150 W
Drain to Source Voltage (Vds)
110 V
Breakdown Voltage (Drain to Source)
110V (min)
Continuous Drain Current (Ids)
2.50 mA
Output Power
150 W
Gain
25 dB
Test Current
450 mA
Input Capacitance (Ciss)
163pF @50V(Vds)
Operating Temperature (Max)
225 ℃
Operating Temperature (Min)
-65 ℃
Voltage Rating
110 V
Supply Voltage
50 V

MRF6V2150NBR1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-65℃ ~ 225℃

MRF6V2150NBR1 Documents

NXP
86 Pages / 0.27 MByte
NXP
22 Pages / 1.62 MByte
NXP
6 Pages / 0.86 MByte
NXP
2 Pages / 0.18 MByte

MRF6V2150 Documents

NXP
NXP MRF6V2150NR1 RF FET Transistor, 110V, 2.5mA, 150W, 10MHz, 450MHz, TO-272
NXP
RF Power Transistor,10 to 450MHz, 150W, Typ Gain in dB is 25 @ 220MHz, 50V, LDMOS, SOT1735
Freescale
Trans RF MOSFET N-CH 110V 5Pin TO-272W T/R
Freescale
Trans RF MOSFET N-CH 110V 5Pin TO-270W T/R
NXP
Trans RF MOSFET N-CH 110V 5Pin TO-272W T/R
Freescale
Trans RF MOSFET N-CH 110V 5Pin TO-272W T/R
NXP
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450MHz, 150W, 50V
NXP
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450MHz, 150W, 50V
Freescale
RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale
Rf Power Field - Effect Transistors
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