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Part Datasheet Search > BJTs > ON Semiconductor > MSB1218A-RT1G Datasheet PDF
MSB1218A-RT1G
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MSB1218A-RT1G Datasheet PDF (4 Pages)
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MSB1218A-RT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-45.0 V
Current Rating
-100 mA
Case/Package
SC-70-3
Polarity
PNP
Power Dissipation
0.15 W
Breakdown Voltage (Collector to Emitter)
45 V
Continuous Collector Current
0.1A
hFE Min
210 @2mA, 10V
Input Power (Max)
150 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
150 mW

MSB1218A-RT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
150℃ (TJ)

MSB1218A-RT1G Documents

ON Semiconductor
4 Pages / 0.11 MByte
ON Semiconductor
11 Pages / 0.1 MByte
ON Semiconductor
6 Pages / 0.1 MByte

MSB1218ART1 Documents

ON Semiconductor
Trans GP BJT PNP 45V 0.1A 3Pin SC-70 T/R
Motorola
PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), PNP
ON Semiconductor
SC-70 PNP 45V 0.1A
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