MT46V16M16CY-6IT:K Datasheet PDF - Micron

● VDD = 2.5V ±0.2V; VDDQ = 2.5V ±0.2V

● VDD = 2.6V ±0.1V; VDDQ = 2.6V ±0.1V (DDR400)

● Bidirectional data strobe (DQS) transmitted/ received with data, that is, source-synchronous data capture (x16 has two o one per byte)

● Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle

● Differential clock inputs (CK and CK#)

● Commands entered on each positive CK edge

● DQS edge-aligned with data for READs; center aligned with data for WRITEs

● DLL to align DQ and DQS transitions with CK

● Four internal banks for concurrent operation

● Data mask (DM) for masking write data (x16 has two o one per byte)

● Programmable burst lengths (BL): 2, 4, or 8

● Auto refresh

● 64ms, 8192-cycle

● Longer-lead TSOP for improved reliability (OCPL)

● 2.5V I/O (SSTL_2-compatible)

● Concurrent auto precharge option supported

● tRAS lockout supported (tRAP = tRCD)