MT48LC4M16A2P-7E Datasheet PDF - Micron

●The MT48LC4M16A2P-7E is a SDR SDRAM with high-speed CMOS and uses an internal pipelined architecture to achieve high-speed operation. This architecture is compatible with the 2n rule of prefetch architectures, but it also allows the column address to be changed on every clock cycle to achieve a high-speed, fully random access. Precharging one bank while accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed and random-access operation. This is a high-speed CMOS, dynamic random-access memory containing 67108864-bits. It is internally configured as a quad-bank DRAM with a synchronous interface. Read and write accesses to the SDRAM is burst-oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an active command, which is then followed by a read or write command.

● PC100 and PC133-compliant

● Fully synchronous, all signals registered on positive edge of system clock

● Internal banks for hiding row access/precharge

● Auto precharge, includes concurrent auto precharge and auto refresh modes

● Self refresh modes - Standard and low-power

● LVTTL-compatible inputs and outputs