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Part Datasheet Search > MOSFETs > ON Semiconductor > MTB30P06VT4G Datasheet PDF
MTB30P06VT4G
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MTB30P06VT4G Datasheet PDF (8 Pages)
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MTB30P06VT4G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-60.0 V
Current Rating
-30.0 A
Case/Package
TO-263-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
80 mΩ
Polarity
P-Channel
Power Dissipation
3 W
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Breakdown Voltage (Gate to Source)
±15.0 V
Continuous Drain Current (Ids)
30.0 A
Rise Time
25.9 ns
Input Capacitance (Ciss)
2190pF @25V(Vds)
Input Power (Max)
3 W
Fall Time
52.4 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3W (Ta), 125W (Tc)

MTB30P06VT4G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.29 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

MTB30P06VT4G Documents

ON Semiconductor
8 Pages / 0.16 MByte
ON Semiconductor
12 Pages / 0.09 MByte

MTB30P06VT4 Documents

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Trans MOSFET P-CH 60V 30A 3Pin(2+Tab) D2PAK T/R
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TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate
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D2PAK P-CH 60V 30A
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