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Part Datasheet Search > MOSFETs > ON Semiconductor > MTD3055V Datasheet PDF
MTD3055V
$ 0.672
MTD3055V Datasheet PDF
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MTD3055V Specifications

TYPE
DESCRIPTION
Number of Pins
3 Pin
Case/Package
TO-252-3
Drain to Source Voltage (Vds)
60 V
Rise Time
60 ns
Input Capacitance (Ciss)
500pF @25V(Vds)
Input Power (Max)
1.5 W
Fall Time
50 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3900 mW

MTD3055V Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 175℃

MTD3055V Documents

ON Semiconductor
5 Pages / 0.45 MByte

MTD3055 Documents

Fairchild
Power Field-Effect Transistor, 12A I(D), 60V, 0.18Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
ON Semiconductor
Trans MOSFET N-CH 60V 12A 3Pin(2+Tab) DPAK
ON Semiconductor
Trans MOSFET N-CH 60V 12A 3Pin(2+Tab) DPAK T/R
Fairchild
Power Field-Effect Transistor, 12A I(D), 60V, 0.15Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
ON Semiconductor
DPAK N-CH 60V 12A
ON Semiconductor
IPAK N-CH 60V 12A
ON Semiconductor
Trans MOSFET N-CH 60V 12A 3Pin(2+Tab) DPAK T/R
Motorola
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18Ω
Motorola
TMOS power FET. 60V, 8A, Rds(on) 0.15Ω.
ON Semiconductor
DPAK N-CH 60V 12A
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