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Part Datasheet Search > MOSFETs > ON Semiconductor > MTD3055VL Datasheet PDF
MTD3055VL
$ 1.32
MTD3055VL Datasheet PDF (3 Pages)
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MTD3055VL Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
60.0 V
Current Rating
12.0 A
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.18 Ω
Polarity
N-Channel
Power Dissipation
3.9 W
Threshold Voltage
1.5 V
Input Capacitance
570 pF
Gate Charge
10.0 nC
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
12.0 A
Input Capacitance (Ciss)
570pF @25V(Vds)
Input Power (Max)
1.5 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
48 W

MTD3055VL Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.39 mm

MTD3055VL Documents

ON Semiconductor
3 Pages / 0.17 MByte
ON Semiconductor
5 Pages / 0.43 MByte
ON Semiconductor
7 Pages / 0.87 MByte

MTD3055 Documents

Fairchild
Power Field-Effect Transistor, 12A I(D), 60V, 0.18Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
ON Semiconductor
Trans MOSFET N-CH 60V 12A 3Pin(2+Tab) DPAK
ON Semiconductor
Trans MOSFET N-CH 60V 12A 3Pin(2+Tab) DPAK T/R
Fairchild
Power Field-Effect Transistor, 12A I(D), 60V, 0.15Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
ON Semiconductor
DPAK N-CH 60V 12A
ON Semiconductor
IPAK N-CH 60V 12A
ON Semiconductor
Trans MOSFET N-CH 60V 12A 3Pin(2+Tab) DPAK T/R
Motorola
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18Ω
Motorola
TMOS power FET. 60V, 8A, Rds(on) 0.15Ω.
ON Semiconductor
DPAK N-CH 60V 12A
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