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MUN2111T1
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MUN2111T1 Datasheet PDF (16 Pages)
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MUN2111T1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
-50.0 V
Current Rating
-100 mA
Case/Package
SOT-23-3
Polarity
PNP
Power Dissipation
230 mW
Breakdown Voltage (Collector to Emitter)
50 V
Continuous Collector Current
100mA
hFE Min
35 @5mA, 10V
hFE Max
35
Input Power (Max)
230 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

MUN2111T1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Cut Tape (CT)
Size-Length
2.9 mm
Size-Width
1.5 mm
Size-Height
1.09 mm

MUN2111T1 Documents

ON Semiconductor
16 Pages / 0.13 MByte
ON Semiconductor
19 Pages / 0.26 MByte
ON Semiconductor
13 Pages / 0.1 MByte

MUN2111 Documents

ON Semiconductor
SC-59-3 PNP 50V 0.1A
Motorola
Sw, 5 0V, 100mA, 200mW, R1 /R2=10/10K
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon,
ON Semiconductor
SC-59 PNP 50V 100mA
ON Semiconductor
SC-59 PNP 50V 100mA
ON Semiconductor
SC-59 PNP 50V 100mA
ON Semiconductor
SC-59 PNP 50V 100mA
Motorola
PNP SILICON BIAS RESISTOR TRANSISTOR
Leshan Radio
50V, bias resistor transistor
Motorola
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, CASE 318D-03, SC-59, 3 PIN
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