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Part Datasheet Search > BJTs > ON Semiconductor > MUN5312DW1T1G Datasheet PDF
MUN5312DW1T1G
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$ 0.026
MUN5312DW1T1G Datasheet PDF (10 Pages)
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MUN5312DW1T1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Voltage Rating (DC)
50.0 V
Current Rating
100 mA
Case/Package
SC-88-6
Polarity
NPN, PNP
Power Dissipation
0.385 W
Breakdown Voltage (Collector to Emitter)
50 V
Continuous Collector Current
100mA
hFE Min
60 @5mA, 10V
Input Power (Max)
250 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
385 mW

MUN5312DW1T1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2 mm
Size-Width
1.25 mm
Size-Height
0.9 mm
Operating Temperature
-55℃ ~ 150℃

MUN5312DW1T1G Documents

ON Semiconductor
10 Pages / 0.09 MByte
ON Semiconductor
36 Pages / 0.15 MByte
ON Semiconductor
6 Pages / 0.05 MByte

MUN5312DW1T1 Documents

ON Semiconductor
SC-88 NPN+PNP 50V 100mA
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ON Semiconductor
SC-88 NPN+PNP 50V 100mA
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon,
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