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MW6S010GNR1
$ 15.082
MW6S010GNR1 Datasheet PDF (3 Pages)
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MW6S010GNR1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
960 MHz
Number of Pins
2 Pin
Voltage Rating (DC)
28.0 V
Current Rating
10 µA
Case/Package
TO-270-2
Halogen Free Status
Halogen Free
Number of Positions
2 Position
Power Dissipation
10 W
Drain to Source Voltage (Vds)
68 V
Output Power
10 W
Gain
18 dB
Test Current
125 mA
Input Capacitance (Ciss)
23pF @28V(Vds)
Operating Temperature (Max)
225 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
61400 mW
Voltage Rating
68 V
Supply Voltage
28 V

MW6S010GNR1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-65℃ ~ 200℃

MW6S010GNR1 Documents

NXP
3 Pages / 0.08 MByte
NXP
30 Pages / 0.29 MByte
NXP
20 Pages / 0.7 MByte
NXP
2 Pages / 0.18 MByte

MW6S010 Documents

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RF Power Field Effect Transistor
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NXP MW6S010GNR1 RF FET Transistor, 68V, 10W, 450MHz, 1.5GHz, TO-270
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RF Power Transistor,450 to 1500MHz, 10W, Typ Gain in dB is 18 @ 960MHz, 28V, LDMOS, SOT1732
Freescale
MOSFET RF N-CH 28V 10W TO270-2GW
Freescale
MOSFET RF N-CH 28V 10W TO270-2
NXP
Trans RF MOSFET N-CH 68V 3Pin TO-270 GULL T/R
NXP
FET RF 68V 960MHz TO-270-2
FSL
MOSFET RF N-CH 28V 10W TO270-2GW
Freescale
MOSFET RF N-CH 28V 10W TO270-2GW
Freescale
MOSFET RF N-CH 28V 10W TO-270-2
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