N25Q256A13ESFH0E Datasheet PDF - Micron

●Description

●The N25Q is the first high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology. It features execute-in-place (XIP) functionality, advanced write protection mechanisms, and a high-speed SPI-compatible bus interface. The innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations.

●Features

●The memory is organized as 512 (64KB) main sectors that are further divided into 16 subsectors each (8192 subsectors in total). The memory can be erased one 4KB subsector at a time, 64KB sectors at a time, or as a whole.

●The memory can be write protected by software through volatile and nonvolatile protection features, depending on the application needs. The protection granularity is of 64KB (sector granularity) for volatile protections

●The device has 64 one-time programmable (OTP) bytes that can be read and programmed with the READ OTP and PROGRAM OTP commands. These 64 bytes can also be permanently locked with a PROGRAM OTP command.

●The device also has the ability to pause and resume PROGRAM and ERASE cycles by us ing dedicated PROGRAM/ERASE SUSPEND and RESUME instructions.