NAND256W3A2BN6E Datasheet PDF - Micron

●The NAND256W3A2BN6E is a 256MB non-volatile NAND Flash Memory that uses the single level cell NAND cell technology. It is referred to as the small page family. The device ranges from 128MB to 1GB and operate with either a 1.8/3V voltage supply. The size of a page is either 528 bytes or 264 Words depending on whether the device has a x8 or x16 bus width. The address lines are multiplexed with the data input/output signals on a multiplexed x8 or x16 input/output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint. The device features an open-drain ready/busy output that can be used to identify if the program/erase/read controller is currently active. The use of an open-drain output allows the ready/ busy pins from several memories to be connected to a single pull-up resistor. A copy back command is available to optimize the management of defective blocks.

● High density

● Multiplexed address/data

● Pinout compatibility for all densities

● Copy back program mode - Fast page copy without external buffering

● Fast block erase - Block erase time - 2ms typical

● Status register

● Electronic signature

● Chip enable DON"T CARE - Simple interface with microcontroller

● Hardware data protection - Program/erase locked during power transitions

● Data integrity - 100000 program/erase cycles

● 10 Years data retention