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NDS331N_Q
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NDS331N_Q Datasheet PDF (8 Pages)
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NDS331N_Q Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOT-23-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
210 mΩ
Polarity
N-CH
Power Dissipation
500 mW
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Drain to Source)
20 V
Continuous Drain Current (Ids)
1.3A
Rise Time
25 ns
Fall Time
25 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃

NDS331N_Q Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
1.2 mm

NDS331N_Q Documents

Fairchild
8 Pages / 0.06 MByte

NDS331 Documents

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MOSFET Transistor, N Channel, 1.3A, 20V, 0.11Ω, 4.5V, 700mV
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Trans MOSFET N-CH 20V 1.3A 3Pin SuperSOT T/R
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1300mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
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