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Part Datasheet Search > MOSFETs > ON Semiconductor > NDS352AP Datasheet PDF
NDS352AP
$ 0.061
NDS352AP Datasheet PDF (7 Pages)
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NDS352AP Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.25 Ω
Power Dissipation
500 mW
Threshold Voltage
1.7 V
Drain to Source Voltage (Vds)
30 V
Input Capacitance (Ciss)
135pF @15V(Vds)
Input Power (Max)
460 mW
Fall Time
30 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
500 mW

NDS352AP Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2.92 mm
Size-Width
1.4 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃

NDS352AP Documents

ON Semiconductor
7 Pages / 0.08 MByte
ON Semiconductor
10 Pages / 0.59 MByte
ON Semiconductor
4 Pages / 0.71 MByte

NDS352 Documents

Fairchild
FAIRCHILD SEMICONDUCTOR NDS352AP MOSFET Transistor, P Channel, 900mA, -30V, 0.25Ω, -10V, -1.7V
ON Semiconductor
MOSFET Transistor, P Channel, 900mA, -30V, 0.25Ω, -10V, -1.7V
Fairchild
MOSFET P-CH 20V 0.85A SSOT3
Fairchild
SuperSOT P-CH 30V 0.9A
National Semiconductor
P-Channel Logic Level Enhancement Mode Field Effect Transistor
TI
900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
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