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Part Datasheet Search > MOSFETs > Fairchild > NDS352P Datasheet PDF
NDS352P
$ 0.096
NDS352P Datasheet PDF (7 Pages)
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NDS352P Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
-20.0 V
Current Rating
-850 mA
Case/Package
SOT-23-3
Drain to Source Resistance (on) (Rds)
460 mΩ
Polarity
P-Channel
Power Dissipation
500mW (Ta)
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Gate to Source)
±12.0 V
Continuous Drain Current (Ids)
-850 mA to 850 mA
Input Capacitance (Ciss)
125pF @10V(Vds)
Input Power (Max)
460 mW
Power Dissipation (Max)
500mW (Ta)

NDS352P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

NDS352P Documents

Fairchild
7 Pages / 0.09 MByte
Fairchild
1 Pages / 0.04 MByte
Fairchild
6 Pages / 0.07 MByte

NDS352 Documents

Fairchild
FAIRCHILD SEMICONDUCTOR NDS352AP MOSFET Transistor, P Channel, 900mA, -30V, 0.25Ω, -10V, -1.7V
ON Semiconductor
MOSFET Transistor, P Channel, 900mA, -30V, 0.25Ω, -10V, -1.7V
Fairchild
MOSFET P-CH 20V 0.85A SSOT3
Fairchild
SuperSOT P-CH 30V 0.9A
National Semiconductor
P-Channel Logic Level Enhancement Mode Field Effect Transistor
TI
900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
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