NDS355N Datasheet PDF - Fairchild

●General Description

●These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

●Features

●1.6A, 30V.  RDS(ON) = 0.125W @ VGS = 4.5V.

●Proprietary package design using copper lead frame for superior thermal and electrical capabilities.

●High density cell design for extremely low RDS(ON).

●Exceptional on-resistance and maximum DC current capability.

●Compact industry standard SOT-23 surface mount package.