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NDS356AP Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

MOSFETs

Case Package:

SOT-23-3

Description:

FAIRCHILD SEMICONDUCTOR NDS356AP MOSFET Transistor, P Channel, 1.1A, -30V, 300mohm, -10V, -2V

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Documentation:

NDS356AP Datasheet (8 Pages)

NDS356AP Datasheet PDF (8 Pages)

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NDS356AP Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Voltage Rating (DC)

-30.0 V

Current Rating

-1.10 A

Case/Package

SOT-23-3

Number of Channels

1 Channel

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

300 mΩ

Polarity

P-Channel

Power Dissipation

500 mW

Drain to Source Voltage (Vds)

30 V

Breakdown Voltage (Drain to Source)

-30.0 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

1.10 A

Rise Time

17 ns

Input Capacitance (Ciss)

280pF @10V(Vds)

Input Power (Max)

460 mW

Fall Time

38 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

500mW (Ta)

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NDS356AP Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

2.92 mm

Size-Width

1.4 mm

Size-Height

0.94 mm

Operating Temperature

-55℃ ~ 150℃

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NDS356AP Environmental

NDS356AP Export Classifications

NDS356AP Function Overview

NDS356AP Documents

NDS356AP Datasheet

Fairchild

8 Pages / 0.13 MByte

NDS356AP Other Datasheet PDF

Fairchild

9 Pages / 0.09 MByte

NDS356AP Drawing Diagrams

Fairchild

1 Pages / 0.04 MByte

NDS356AP Other References

Fairchild

1 Pages / 0.15 MByte

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FAIRCHILD SEMICONDUCTOR NDS356AP MOSFET Transistor, P Channel, 1.1A, -30V, 300mohm, -10V, -2V

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