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Part Datasheet Search > MOSFETs > Fairchild > NDS356P Datasheet PDF
NDS356P
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NDS356P Datasheet PDF (7 Pages)
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NDS356P Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
-20.0 V
Current Rating
-1.10 A
Case/Package
SOT-23-3
Polarity
P-CH
Power Dissipation
500mW (Ta)
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
1.1A
Input Capacitance (Ciss)
180pF @10V(Vds)
Input Power (Max)
460 mW
Power Dissipation (Max)
500mW (Ta)

NDS356P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

NDS356P Documents

Fairchild
7 Pages / 0.08 MByte
Fairchild
7 Pages / 0.08 MByte
Fairchild
1 Pages / 0.04 MByte
Fairchild
6 Pages / 0.07 MByte

NDS356 Documents

Fairchild
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Fairchild
FAIRCHILD SEMICONDUCTOR NDS356AP MOSFET Transistor, P Channel, 1.1A, -30V, 300mohm, -10V, -2V
ON Semiconductor
MOSFET P-CH 30V 1.1A SSOT3
Fairchild
MOSFET P-CH 20V 1.1A SSOT-3
ON Semiconductor
MSOFET N-CH SMD
Freescale
MOSFET P-CH 30V 1.1A SSOT3
ON Semiconductor
MOSFET P-CH 20V 1.1A SSOT-3
TI
1100mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
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