NDT2955 Datasheet PDF - ON Semiconductor

●The NDT2955 from Fairchild is a surface mount, 60V P channel enhancement mode field effect transistors in SOT-223 package. Transistor is produced using Fairchild"s high voltage trench process and suitable for power management applications.

● High density cell design for extremely low Rds(ON)

● Drain to source voltage (Vds) of -60V

● Gate to source voltage of ±20V

● Continuous drain current (Id) of -2.5A

● Power dissipation (pd) of 3W

● Low on state resistance of 163mohm at Vgs -4.5V

● Operating temperature range -55°C to 150°C